激光分子束外延系统-Laser MBE

Pulsed Laser Deposition Systems

激光分子束外延系统是一种用于物理学、材料科学领域的工艺试验仪器。

中文名
激光分子束外延系统
产    地
荷兰
学科领域
物理学、材料科学
启用日期
2015年5月6日
所属类别
工艺试验仪器 > 电子工艺实验设备 > 电真空器件工艺实验设备

目录

技术指标

编辑 语音

超高真空沉积腔体,本底真空优于10-9mbar激光能量 700mJ,频率 100 Hz。 [1]

主要功能

编辑 语音

激光分子束外延系统(LMBE)是在传统的分子束外延(MBE)和脉冲激光沉积系统(PLD)的基础上发展而来的,PLD与提供原位监测的反射高能电子衍射仪(RHEED)相结合,使得系统能够实现类似于MBE的,单原子层精度的薄膜生长。相比于MBE的热蒸发,它是使用脉冲激光的高能量使材料蒸发甚至电离,因此被称作Laser MBE(激光分子束外延系统)。LMBE属于高端薄膜制备设备,适用于生长各种纳米尺度的单层膜或多层膜。
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Laser MBE Systems

Pulsed Laser Deposition Systems

Laser MBE System with Excimer Laser

Laser MBE System

Laser MBE System

Pulsed laser ablation offers another technique for material deposition in epitaxial growth. SVTA offers systems optimized for Laser Molecular Beam Epitaxy (MBE) with the corresponding MBE monitors and tools to monitor epitaxial growth, as well as general Pulsed Laser Deposition Systems(PLD) for more general film deposition.

Our Laser MBE systems also offer the ability to combine pulsed laser ablation with other MBE deposition sources to provide flexibility in your materials laboratory. High purity materials can now include high melting point ceramics and multi-component solids.

Laser MBE Features

  • UHV Environment
  • 6 Rotatable PLD Targets
  • High Power Excimer Laser
  • Full computer control with data logging
  • Multiple Deposition Sources
  • RF Plasma Source
  • Effusion Cells
  • E-Beam Evaporation
  • High Purity Ozone Delivery System
  • Advanced In-Situ Sample Temperature and Film Thickness Monitoring
  • Real-Time Atomic Absorption Flux Monitor
  • RHEED and RHEED Image Analysis
  • Tailored Pumping Combinations

 

Contact SVTA for more information.

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标准MBE系统-OCTOPLUS 400

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